Study on microscopic defects in Fe-Doped InP single crystals
Identifieur interne : 000018 ( Main/Exploration ); précédent : 000017; suivant : 000019Study on microscopic defects in Fe-Doped InP single crystals
Auteurs : RBID : ISTEX:11664_1996_Article_BF02666599.pdfEnglish descriptors
Abstract
Effect of crystal growth conditions on the density of microscopic defects, observed on polished Fe-doped InP LEC single crystal wafers, has been investigated by an interference contrast microscope and a laser scattering tomography (LST) system. It was found that microscopic defects have no correlation with dislocations. Crystal rotation speed affects the density of microscopic defects. In addition, the density depends on the time that the InP melt is held in the molten state before crystal growth. On the other hand, it was found that the H2O concentration in B2O3 has no correlation with the generation of microscopic defects. The relationship between the microscopic defects and the stoichiometry of grown crystals was investigated by coulometric titration analysis. Since the density of microscopic defects is reduced as the indium concentration decreases, it is speculated that their origin is indium or indium oxide.
DOI: 10.1007/BF02666599
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Hirano</name><affiliation wicri:level="1"><mods:affiliation>Japan Energy Corporation, Advanced Materials Research Center, 187-4, Usuba, Hanakawa, Kitaibaraki, Ibaraki, Japan</mods:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Japan Energy Corporation, Advanced Materials Research Center, 187-4, Usuba, Hanakawa, Kitaibaraki, Ibaraki</wicri:regionArea><wicri:noRegion>Ibaraki</wicri:noRegion></affiliation></author><author><name>O. Oda</name><affiliation wicri:level="1"><mods:affiliation>Electronic Materials and Components Laboratories, Japan Energy Corporation, Niizo-Minami, 3-17-35, Toda, Saitama, Japan</mods:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Electronic Materials and Components Laboratories, Japan Energy Corporation, Niizo-Minami, 3-17-35, Toda, Saitama</wicri:regionArea><wicri:noRegion>Saitama</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1996_Article_BF02666599.pdf</idno><date when="1996">1996</date><idno type="doi">10.1007/BF02666599</idno><idno type="wicri:Area/Main/Corpus">000228</idno><idno type="wicri:Area/Main/Curation">000228</idno><idno type="wicri:Area/Main/Exploration">000018</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Defects in InP</term><term>Fe-doped InP</term><term>LEC InP growth</term><term>Laser scattering tomography (LST)</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Effect of crystal growth conditions on the density of microscopic defects, observed on polished Fe-doped InP LEC single crystal wafers, has been investigated by an interference contrast microscope and a laser scattering tomography (LST) system. It was found that microscopic defects have no correlation with dislocations. Crystal rotation speed affects the density of microscopic defects. In addition, the density depends on the time that the InP melt is held in the molten state before crystal growth. On the other hand, it was found that the H2O concentration in B2O3 has no correlation with the generation of microscopic defects. The relationship between the microscopic defects and the stoichiometry of grown crystals was investigated by coulometric titration analysis. Since the density of microscopic defects is reduced as the indium concentration decreases, it is speculated that their origin is indium or indium oxide.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="2578885238c1a34fb03e40e3eaef4bb6bd6a6344"><titleInfo lang="eng"><title>Study on microscopic defects in Fe-Doped InP single crystals</title></titleInfo><name type="personal"><namePart type="given">K.</namePart><namePart type="family">Kohiro</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Electronic Materials and Components Laboratories, Japan Energy Corporation, Niizo-Minami, 3-17-35, Toda, Saitama, Japan</affiliation></name><name type="personal"><namePart type="given">R.</namePart><namePart type="family">Hirano</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Japan Energy Corporation, Advanced Materials Research Center, 187-4, Usuba, Hanakawa, Kitaibaraki, Ibaraki, Japan</affiliation></name><name type="personal"><namePart type="given">O.</namePart><namePart type="family">Oda</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Electronic Materials and Components Laboratories, Japan Energy Corporation, Niizo-Minami, 3-17-35, Toda, Saitama, Japan</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1995-06-19</dateCreated><dateValid encoding="w3cdtf">2007-07-01</dateValid><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Effect of crystal growth conditions on the density of microscopic defects, observed on polished Fe-doped InP LEC single crystal wafers, has been investigated by an interference contrast microscope and a laser scattering tomography (LST) system. It was found that microscopic defects have no correlation with dislocations. Crystal rotation speed affects the density of microscopic defects. In addition, the density depends on the time that the InP melt is held in the molten state before crystal growth. On the other hand, it was found that the H2O concentration in B2O3 has no correlation with the generation of microscopic defects. The relationship between the microscopic defects and the stoichiometry of grown crystals was investigated by coulometric titration analysis. Since the density of microscopic defects is reduced as the indium concentration decreases, it is speculated that their origin is indium or indium oxide.</abstract><subject lang="eng"><genre>Key words</genre><topic>Defects in InP</topic><topic>Fe-doped InP</topic><topic>laser scattering tomography (LST)</topic><topic>LEC InP growth</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1996</partNumber><partNumber>Volume: 25</partNumber><partNumber>Number: 3</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1996-03-01</dateIssued><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Solid State Physics and Spectroscopy</topic><topic>Electronics and Microelectronics, Instrumentation</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 40</identifier><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1996</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02666599</identifier><identifier type="matrixNumber">Art5</identifier><identifier type="local">BF02666599</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>343</start><end>346</end></extent></part><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1996</recordOrigin><recordIdentifier>11664_1996_Article_BF02666599.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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